BC338 discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor description designed for driver and output stage of audio amplifiers. pinning 1 = collector 2 = base 3 = emitter to-92 dimensions in inches and (millimeters) .022(0.56).014(0.36) .050 (1.27) .148(3.76).132(3.36) typ .190(4.83).170(4.33) .100 (2.54) typ .050 (1.27) typ .022(0.56).014(0.36) .190(4.83).170(4.33) .500 (12.70) min 2o typ 5o typ. 2o typ 3 2 1 5o typ. characteristic symbol rating unit collector-base voltage vcbo 30 v collector-emitter voltage vceo 25 v emitter-base voltage vebo 5 v collector current ic 800 ma total power dissipation pd 625 mw junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 30 - - v ic=100ma, ie=0 collector-emitter breakdown voltage bvceo 25 - - v ic=10ma, ib=0 emitter-base breakdown volatge bvebo 5 - - v ie=10ma, ic=0 collector cutoff current icbo - - 0.1 ma vcb =25v, ie=0 collector-emitter saturation voltage (1) vce(sat) - - 0.7 v ic=500ma, ib=50ma base-emitter on voltage (1) vbe(on) - - 1.2 v ic=300ma, vce =1v dc current gain(1) hfe1 100 - 630 - ic=100ma, vce=1v hfe2 40 - - - ic=300ma, vce=1v transition frequency ft - 210 - mhz ic=10ma, vce =5v, f=100mhz output capacitance cob - 12 - pf vcb =10v, f=1mhz, ie=0 electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank 16 25 40 range 100~250 160~400 250~630 classification of hfe1
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